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november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter i tsp a i tsm a di/dt a/ s waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 hz 2/10 wavefront value 500 300 250 200 160 100 60 400 TISP4XXXH3BJ overvoltage protector series tisp4070h3bj thru tisp4115h3bj, tisp4125h3bj thru tisp4220h3bj, tisp4240h3bj thru tisp4400h3bj bidirectional thyristor overvoltage protectors summary current ratings summary electrical characteristics part # v drm v v (bo) v v t @ i t v i drm a i (bo) ma i t a i h ma c o @ -2 v pf functionally replaces tisp4070h3 58 70 3 5 600 5 150 120 p0640sc tisp4080h3 65 80 3 5 600 5 150 120 p0720sc tisp4095h3 75 95 3 5 600 5 150 120 p0900sc tisp4115h3 90 115 3 5 600 5 150 120 p1100sc tisp4125h3 100 125 3 5 600 5 150 65 tisp4145h3 120 145 3 5 600 5 150 65 p1300sc tisp4165h3 135 165 3 5 600 5 150 65 tisp4180h3 145 180 3 5 600 5 150 65 p1500sc tisp4200h3 155 200 3 5 600 5 150 65 tisp4220h3 160 220 3 5 600 5 150 65 p1800sc tisp4240h3 180 240 3 5 600 5 150 55 tisp4250h3 190 250 3 5 600 5 150 55 p2300sc tisp4265h3 200 265 3 5 600 5 150 55 tisp4290h3 220 290 3 5 600 5 150 55 p2600sc tisp4300h3 230 300 3 5 600 5 150 55 tisp4350h3 275 350 3 5 600 5 150 55 p3100sc tisp4395h3 320 395 3 5 600 5 150 55 p3500sc tisp4400h3 300 400 3 5 600 5 150 55 b ourns part has an improved protection voltage this tisp device series protects central office, access and customer premise equipment against overvoltages on the telecom line. the TISP4XXXH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. these protectors have been specified mindful of the following standards and recommendations: gr-1089-core, fcc part 68, ul1950, en 60 950, iec 60950, itu-t k.20, k.21 and k.45. the tisp4350h3bj meets the fcc part 68 ??ringer voltage requirement and survives the ty pe a and b impulse tests. these devices are housed in a surface mount smb (do-214aa) package. TISP4XXXH3BJ overview *rohs directive 2002/95/ec jan 27 2003 including annex *r o h s c o m p l i a n t v e r s i o n s a v a i l a b l e
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t r sd4xaa terminals t and r correspond to the alternative line designators of a and b device symbol device v drm v v (bo) v ?070 58 70 ?080 65 80 ?095 75 95 ?115 9 0 115 ?125 100 125 ?145 120 145 ?165 135 165 ?180 145 180 ?200 155 200 ?220 160 220 ?240 180 240 ?250 190 250 ?265 200 265 ?290 220 290 ?300 230 300 ?350 275 350 ?395 320 395 ?400 300 400 low differential capacitance ...................................67 pf max. 12 t(a) r(b) mdx xbg how to order smbj package (top view) description itu-t k.20/21 rating . . . . . . . . . . . . . 8 kv 10/700, 200 a 5/310 ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes TISP4XXXH3BJ overvoltage protector series waveshape s tand ard i tsp a 2/10 sg r-1089-core 500 8/20 si ec 61000-4-5 300 10/160 s fcc part 68 250 10/700 si tu-t k.20/21 200 10/560 s fcc part 68 160 10/1000 sg r-1089-core 100 these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combi nations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. this TISP4XXXH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 v to 320 v). th ey are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these high (h) current protection devices are in a plastic package smbj (jedec do-214aa with j-bend leads) and supplied in embossed carrier reel pack. for alternative vo ltage and holding current values, consult the factory. for lower rated impulse currents in the smb package, the 50 a 10/1000 tisp4xxxm3bj series is available. ............................................... ul recognized component device p ackage carrier for standard termination finish order as for lead free termination finish order as TISP4XXXH3BJ bj (j-bend do-214aa/smb) embo ssed tape reeled TISP4XXXH3BJr bulk pack TISP4XXXH3BJ insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc. TISP4XXXH3BJr-s TISP4XXXH3BJ-s
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP4XXXH3BJ overvoltage protector series rating sy m bol value unit re petitive peak off-state voltage, (see note 1) 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4395 4400 v drm 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 320 300 v non-repetitive peak on-state pulse current (see notes 2, 3 and 4) i tsp a 2/10 s( gr -1089-core, 2/10 s voltage wave shape) 500 8/20 s( ie c 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 300 10/160 s(f cc part 68, 10/160 s voltage wave shape) 250 5/200 s( vde 0433, 10/700 s voltage wave shape) 220 0.2/310 s (i3124, 0.5/700 s voltage wave shape) 200 5/310 s( i tu-t k.20/21, 10/700 s voltage wave shape) 200 5/310 s(f tz r12, 10/700 s voltage wave shape) 200 10/560 s(f cc part 68, 10/560 s voltage wave shape) 160 10/1000 s( gr -1089-core, 10/1000 s voltage wave shape) 100 non-repetitive peak on-state current (see notes 2, 3 and 5) i tsm 55 60 2.1 a 20 ms (50 hz) full sine wave 16.7 ms (60 hz) full sine wave 1000 s 50 hz/60 hz a.c. initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 a di t /dt 400 a/ s j unction temperature t j -40 to +150 c st or age temperature range t stg -65 to +150 c notes: 1. see applications information and figure 10 for voltage values at lower temperatures. 2. initially, the TISP4XXXH3BJ must be in thermal equilibrium with t j =25 c. 3. the surge may be repeated after the TISP4XXXH3BJ returns to its initial conditions. 4. see applications information and figure 11 for current ratings at other temperatures. 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 8 for the current ratings at other durations. derate current values at -0.61 %/ c for ambient temperatures above 25 c. absolute maximum ratings, t a = 25 c (unless otherwise noted)
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics, t a = 25 c (unless otherwise noted) TISP4XXXH3BJ overvoltage protector series pa rameter test conditions min. typ. max. unit i drm repetitive peak off- st ate current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakove r voltage dv/dt = 750 v/ms, r sour ce = 300 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4395 4400 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 395 400 v v (bo) impuls e breakover voltage dv/dt 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4395 4400 78 88 103 124 134 154 174 189 210 230 250 261 276 301 311 362 408 413 v i (bo) breakover current dv/dt = 750 v/ms, r sour ce = 300 0.15 0.6 a v t on-state voltage i t = 5a, t w = 100 s 3v i h hold ing current i t = 5a, di/dt=-/+30ma/ms 0.15 0.6 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5kv/ s i d off-state current v d = 50 v t a = 85 c 10 a ? ?
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics, t a = 25 c (unless otherwise noted) (continued) TISP4XXXH3BJ overvoltage protector series c off off-state capacitance f= 100 khz, v d =1v rms, v d =0, f= 100 khz, v d =1v rms, v d =-1v f= 100 khz, v d =1v rms, v d =-2v f= 100 khz, v d =1v rms, v d =-50v f= 100 khz, v d =1v rms, v d =- 100 v (see note 6) 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4125 thru ?220 4240 thru ?400 145 80 70 130 71 60 120 65 55 62 30 24 28 22 170 90 84 150 79 67 140 74 62 73 35 28 33 26 pf note 6: to avoid possible voltage clipping, the 4125 is tested with v d =-98v. pa rameter test conditions min. typ. max. unit thermal characteristics pa rameter test conditions min. typ. max. unit r ja j unction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(10 00) , t a = 25 c, (see note 7) 113 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 50 note 7: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information TISP4XXXH3BJ overvoltage protector series figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching char acteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadra nt iii switching char acteristic pmxxaab v drm i drm
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ypical characteristics TISP4XXXH3BJ overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0001 001 01 1 10 100 t chag v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc4haf v t - on-s tate volt age - v 0.7 1.5 2 3 4 5 7 110 i t - on-s tate current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc4hacb ' 4240 t hru ' 4400 ' 4070 t hru ' 4115 ' 4125 t hru ' 4220 t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4had off-state current vs junction temperature on-state current vs on-state voltage normalized holding current vs junction temperature normalized breakover voltage vs junction temperature
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ypical characteristics TISP4XXXH3BJ overvoltage protector series figure 6. figure 7. v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 c v d = 1 vrms tc4habb ' 4125 t hru '4220 ' 4240 t hru '4400 ' 4070 t hru '4115 v drm - re petitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 100 c - differential off-state capacitance - pf 30 35 40 45 50 55 60 65 70 75 c = c o ff(-2 v) - c o ff(-50 v) ' 4070 ' 4080 ' 4095 ' 4125 ' 4145 ' 4165 ' 4180 ' 4265 ' 4300 ' 4350 ' 4400 ' 4200 ' 4240 ' 4115 ' 4220 ' 4250 ' 4290 ' 4395 tch aeb normalized capacitance vs off-state voltage differential off-state capacitance vs rated repetitive peak off-state voltage
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. rating and thermal information TISP4XXXH3BJ overvoltage protector series figure 8. figure 9. figure 10. figure 11. t - current duration - s 01 1 10 100 1000 i tsm (t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti4hac v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c t - power duration - s 01 1 10 100 1000 z ja (t) - transient thermal impedance - c/w 1.5 2 3 4 5 7 15 20 30 40 50 70 150 1 10 100 ti4hae i tsm (t) applied for time t eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c t amin - mi ni mum ambient temperature - c -35 -25 -1 5-5 5 15 25 -40 -30 -20 -10 0 10 20 de ra ti ng factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4hadb ' 4240 t hru ' 4440 ' 4070 t hru ' 4115 ' 4125 t hru ' 4220 t a - ambient temperature - c -40 -30 -20 -10 0 10 2 0304050607080 impulse current - a 90 100 120 150 200 250 300 400 500 600 700 iec 1. 2/50, 8/20 itu-t 10/700 fcc 10/560 bellcore 2/10 bellcore 10/1000 fcc 10/160 tc4haa non-repetitive peak on-state current vs current duration v drm derating factor vs minimum ambient temperature impulse rating vs ambient temperature thermal impedance vs power duration
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. deployment applications information impulse testing TISP4XXXH3BJ overvoltage protector series these devices are two terminal overvoltage protectors. they may be used either singly to limit the voltage between two conducto rs (figure 12) or in multiples to limit the voltage at several points in a circuit (figure 13). in figure 12, protector th1 limits the maximum voltage between the two conductors to v (bo) . this configuration is normally used to protect circuits without a ground reference, such as modems. in figure 13, protectors th2 and th3 limit the maximum voltage between eac h conduc- tor and ground to the v (bo) of the individual protector. protector th1 limits the maximum voltage between the two conductors to its v (bo) value. if the equipment being protected has all its vulnerable components connected between the conductors and ground, then pro tector th1 is not required. to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various imp ulse wave forms. the table below shows some common values. if the impulse generator current exceeds the protectors current rating, then a series resistance can be used to reduce the cur r ent to the protectors rated value to prevent possible failure. the required value of series resistance for a given waveform is given by t he following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the prote ctors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subt racted from the minimum total circuit impedance to give the required value of series resistance. in some cases, the equipment will require veri fication over a temperature range. by using the rated waveform values from figure 11, the appropriate series resistor value can be calculated f or ambient temperatures in the range of -40 c to 85 c. figure 12. two point protection figure 13. multi-point protection th1 th3 th2 th1 standard peak voltage setting v volt age waveform s peak current value a current waveform s tisp4xxxh3 25 c rating a ? series resistance gr -1089-core 2500 2/10 500 2/10 500 0 1000 10/1000 100 10/1000 100 fcc part 68 (march 1998) 1500 10/160 200 10/160 250 0 800 10/560 100 10/560 160 0 1500 9/720 ? 37.5 5/320 ? 200 0 1000 9/720 ? 25 5/320 ? 200 0 i3124 1500 0.5/700 37.5 0.2/310 200 0 itu-t k.20/k.21 1500 4000 10/700 37.5 100 5/310 200 0 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generator
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. the protector can withstand currents applied for times not exceeding those shown in figure 8. currents that exceed these times must be terminated or reduced to avoid protector failure. fuses, ptc (positive temperature coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. protective fuses may range from a few hundred milliamperes to one ampere. in some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. the current versus time characteristic of the overcurrent protector must be below the line shown in figure 8. in some cases, there may be a furthe r time limit imposed by the test standard (e.g. ul 1459 wiring simulator failure). ac power testing capacitance applications information normal system voltage levels TISP4XXXH3BJ overvoltage protector series the protector characteristic off-state capacitance values are given for d.c. bias voltage, v d , values of 0, -1 v, -2 v and -50 v. where possible, values are also given for -100 v. values for other voltages may be calculated by multiplying the v d = 0 capacitance value by the factor given in figure 6. up to 10 mhz, the capacitance is essentially independent of frequency. above 10 mhz, the effective capacitance is str ongly dependent on connection inductance. in many applications, such as figure 15 and figure 17, the typical conductor bias voltages will be about -2 v and -50 v. figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 v and the ot her at -50 v. the protector should not clip or limit the voltages that occur in normal system operation. for unusual conditions, such as ring ing without the line connected, some degree of clipping is permissible. under this condition, about 10 v of clipping is normally possible witho ut activating the ring trip circuit. figure 10 allows the calculation of the protector v drm value at temperatures below 25 c. the calculated value should not be less than the maximum normal system voltages. the tisp4265h3bj, with a v drm of 200 v, can be used for the protection of ring generators producing 100 v r.m.s. of ring on a battery voltage of -58 v (th2 and th3 in figure 17). the peak ring voltage will be 58 + 1.414*100 = 1 99.4 v. however, this is the open circuit voltage and the connection of the line, and its equipment will reduce the peak voltage. in the extreme case of an unconnected line, clipping the peak voltage to 190 v should not activate the ring trip. this level of clipping would occur at t he temperature when the v drm has reduced to 190/200 = 0.95 of its 25 c value. figure 10 shows that this condition will occur at an ambient temperature of -22 c. in this example, the tisp4265h3bj will allow normal equipment operation provided that the minimum expected ambient temperatu re does not fall below -22 c. jesd51 thermal measurement method to standardize thermal measurements, the eia (electronic industries alliance) has created the jesd51 standard. part 2 of the st andard (jesd51-2, 1995) describes the test environment. this is a 0.0283 m 3 (1 ft 3 ) cube which contains the test pcb (printed circuit board) horizontally mounted at the center. part 3 of the standard (jesd51-3, 1996) defines two test pcbs for surface mount components; one for packages smaller than 27 mm (1.06 ? on a side and the other for packages up to 48 mm (1.89 ?. the smbj measurements used th e smaller 76.2 mm x 114.3 mm (3.0 x 4.5 ? pcb. the jesd51-3 pcbs are designed to have low effective thermal conductivity (high therm al resis- tance) and represent a worse case condition. the pcbs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the jesd51 values.
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ypical circuits TISP4XXXH3BJ overvoltage protector series fi gure 14. modem in ter-wire protection figure 15. protection module fi gure 16. isdn protection figure 17. line card ring/test protection fuse tisp 4350 ai6xbma ring detector hook switch d.c. sink si gnal modem ring tip r1a r1b ring wire tip wire th3 th2 th1 protected equipment e. g. line card ai6xbk r1a r1b th3 th2 th1 ai6xbl si gnal d.c. test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th3 th2 th1 th4 th5 slic slic protection ring/test protection o ver- current protection s2a s2b s3a s3b v bat c1 220 nf ai6xbj tisp6x xxx, tisppblx, 1/2tisp6ntp2
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. recommended printed wiring footprint device symbolization code mechanical data devices will be coded as below. as the device parameters are symmetrical, terminal 1 is not identified. devices are shipped in one of the carriers below. unless a specific method of shipment is specified by the customer, devices wi ll be shipped in the most practical carrier. for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may b e shipped in bulk pack or embossed tape. carrier information TISP4XXXH3BJ overvoltage protector series smb pad size mdxx bi metric (inches) dimensions are: 2.54 (0.10) 2.40 (0.09) 2.16 (0.09) carrier for standard termination finish order as for lead free termination finish order as em bossed tape reeled TISP4XXXH3BJr bulk pack TISP4XXXH3BJ TISP4XXXH3BJr-s TISP4XXXH3BJ-s device symbolization code tisp4070h3bj 4070h3 tisp4080h3bj 4080h3 tisp4095h3bj 4095h3 tisp4115h3bj 4115h3 tisp4125h3bj 4125h3 tisp4145h3bj 4145h3 tisp4165h3bj 4165h3 tisp4180h3bj 4180h3 tisp4200h3bj 4200h3 tisp4220h3bj 4220h3 tisp4240h3bj 4240h3 tisp4250h3bj 4250h3 tisp4265h3bj 4265h3 tisp4290h3bj 4290h3 tisp4300h3bj 4300h3 tisp4350h3bj 4350h3 tisp4395h3bj 4395h3 tisp4400h3bj 4400h3
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. smbj (do-214aa) plastic surface mount diode package mechanical data smb mdx xbha 2 index mark (if needed) metric (inches) dimensions are: 4.06 - 4.57 (.160 - .180) 3.30 - 3.94 (.130 - .155) 1.96 - 2.32 (.077 - .091) 0.10 - 0.20 (.004 - .008) 0.76 - 1.52 (.030 - .060) 2.00 - 2.40 (.079 - .094) 1.90 - 2.10 (.075 - .083) 5.21 - 5.59 (.205 - .220) this surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compou nd will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated i n high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. TISP4XXXH3BJ overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ape dimensions mechanical data smb package single-sprocket tape direction of feed embossm ent carrier tape cover tape notes: a. the clearance between the component and the cavity must be within 0.05 mm (.002 in.) (.026 in.) min. to 0.65 mm max. so that the compon n et cann ot rota te more than 20 w ithin the determined cavity. b. ta ped devices are supplied on a reel of the following dimensions:- reel diameter: 330 3.0 mm (2.95 in.) (.512 .020 in.) (12.99 .118 in.) reel hub diameter 75 mm min. reel axial hole: 13.0 0.5 mm c. 30 00 devices are on a reel. md xxbj 20 typical component cavity cent r e li ne maximium com ponent rotation typical component cent r e line index mark 3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081) 1.55 - 1.65 (.061 - .065) 1.65 - 1.85 (.065 - .073) 5.54 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 7.90 - 8.10 (.311 - .319) 8.20 (.323) max. 0.40 (.016) max. 4.50 (.177) max. 0 min. 1.50 (.059) min. metric (inches) dimensions are: TISP4XXXH3BJ overvoltage protector series ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

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